Resonant tunneling in (001)- and (111)-oriented III-V double-barrier heterostructures under transverse and longitudinal stresses

Keyphrases

• (111)-oriented 100%
• Band Structure Effects 50%
• Barrier Layer 50%
• Conduction Band 50%
• Crystal Strain 50%
• Current-voltage Characteristics 50%
• Double Barrier 50%
• Double-barrier Heterostructure 100%
• External Pressure 50%
• External Stress 50%
• III-V 100%
• Internal Electric Field 50%
• Lattice Mismatch 50%
• Longitudinal Stress 100%
• Piezoelectric Effect 50%
• Piezoelectric Structure 50%
• Pseudomorphic Structures 50%
• Resonant Tunneling 100%
• Resonant Tunneling Devices 50%
• Stress Orientation 50%
• Transmission Resonance 50%
• Transverse Stress 100%
• Unconstraining 50%
• Valence Band 50%
• Voltage Characteristics 50%

Engineering

• Band Structure 50%
• Barrier Layer 50%
• Conduction Band 50%
• Current Direction 50%
• Current-Voltage Characteristic 50%
• External Pressure 50%
• External Stress 50%
• Heterostructures 100%
• Internal Electric Field 50%
• Lattice Mismatch 50%
• Longitudinal Stress 100%
• Piezoelectric Effect 50%
• Piezoelectric Structure 50%
• Resonant Tunneling 100%
• Transmissions 50%
• Valence Band 50%

Material Science

• Current Voltage Characteristics 50%
• Heterojunction 100%
• Lattice Mismatch 50%
• Piezoelectricity 100%