Reliability simulator for interconnect and intermetallic contact electromigration

B. K. Liew, Peng Fang, N. W. Cheung, C. Hu

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

A previously developed model for predicting interconnect electromigration time-to-failure under arbitrary current waveforms is shown to be applicable to Al-W intermetallic contacts as well. This model is incorporated in a circuit electromigration reliability simulator which can (1) generate layout advisory for width and length of each interconnect, the safety factor of each contact and via in a circuit to meet user-specified reliability requirements and (2) estimate the overall circuit electromigration failure rate and/or cumulative percent failure.

Original languageEnglish (US)
Pages (from-to)111-118
Number of pages8
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - Dec 1 1990
EventTwenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA
Duration: Mar 27 1990Mar 29 1990

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Electromigration
Intermetallics
Simulators
Networks (circuits)
Safety factor

Cite this

Reliability simulator for interconnect and intermetallic contact electromigration. / Liew, B. K.; Fang, Peng; Cheung, N. W.; Hu, C.

In: Annual Proceedings - Reliability Physics (Symposium), 01.12.1990, p. 111-118.

Research output: Contribution to journalConference article

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