@inproceedings{470857a6425e459e824c5d679f595a2b,
title = "Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding",
abstract = "A reliability evaluation of a 300-mm-compatible 3DI process is presented. The structure has tungsten through-Si-vias (TSVs), a hybrid Cu/adhesive bonding interface, and a post Si-thinning Cu BEOL. The interface bonding strength, deep thermal cycles test, temperature and humidity test, and ambient permeation oxidation all show favorable results, indicating the suitability of this technology for VLSI applications.",
author = "Yu, {R. R.} and F. Liu and Polastre, {R. J.} and Chen, {K. N.} and Liu, {X. H.} and L. Shi and Perfecto, {E. D.} and Klymko, {N. R.} and Chace, {M. S.} and Shaw, {T. M.} and D. Dimilia and Kinser, {E. R.} and Young, {A. M.} and S. Purushothaman and Koester, {S. J.} and W. Haensch",
year = "2009",
month = nov,
day = "16",
language = "English (US)",
isbn = "9784863480094",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "170--171",
booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",
note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",
}