Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding

R. R. Yu, F. Liu, R. J. Polastre, K. N. Chen, X. H. Liu, L. Shi, E. D. Perfecto, N. R. Klymko, M. S. Chace, T. M. Shaw, D. Dimilia, E. R. Kinser, A. M. Young, S. Purushothaman, S. J. Koester, W. Haensch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations

Abstract

A reliability evaluation of a 300-mm-compatible 3DI process is presented. The structure has tungsten through-Si-vias (TSVs), a hybrid Cu/adhesive bonding interface, and a post Si-thinning Cu BEOL. The interface bonding strength, deep thermal cycles test, temperature and humidity test, and ambient permeation oxidation all show favorable results, indicating the suitability of this technology for VLSI applications.

Original languageEnglish (US)
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages170-171
Number of pages2
StatePublished - Nov 16 2009
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: Jun 16 2009Jun 18 2009

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period6/16/096/18/09

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