TY - GEN
T1 - Reliability Characterization of Logic-Compatible NAND Flash Memory based Synapses with 3-bit per Cell Weights and 1μA Current Steps
AU - Kim, Minsu
AU - Song, Jeehwan
AU - Kim, Chris H.
PY - 2020/4
Y1 - 2020/4
N2 - A logic-compatible embedded NAND (eNAND) flash memory based synapse with 3 bit per cell weight storage and 1μA current steps was demonstrated in a standard 65nm CMOS process. The eNAND flash based neuromorphic core consists of 16stack eNAND strings. Each flash cell is composed of 3 transistors (2 PMOS and 1 NMOS) and each string is connected to the main bitline via 2 additional NMOS access transistors. In this work, we realized 3 bit weight based on 1μA current steps using the proposed back-pattern tolerant program-verify scheme. To evaluate the reliability of eNAND Flash based synapses, we measured the temperature dependence, read disturbance, and retention characteristics from a 65nm test chip with 3 bit per cell weight storage and 1μA current steps.
AB - A logic-compatible embedded NAND (eNAND) flash memory based synapse with 3 bit per cell weight storage and 1μA current steps was demonstrated in a standard 65nm CMOS process. The eNAND flash based neuromorphic core consists of 16stack eNAND strings. Each flash cell is composed of 3 transistors (2 PMOS and 1 NMOS) and each string is connected to the main bitline via 2 additional NMOS access transistors. In this work, we realized 3 bit weight based on 1μA current steps using the proposed back-pattern tolerant program-verify scheme. To evaluate the reliability of eNAND Flash based synapses, we measured the temperature dependence, read disturbance, and retention characteristics from a 65nm test chip with 3 bit per cell weight storage and 1μA current steps.
KW - Embedded NAND (eNAND)
KW - logic-compatible NAND flash memory
KW - neuromorphic computing
KW - read disturbance
KW - retention characteristic
UR - http://www.scopus.com/inward/record.url?scp=85088379724&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85088379724&partnerID=8YFLogxK
U2 - 10.1109/IRPS45951.2020.9129148
DO - 10.1109/IRPS45951.2020.9129148
M3 - Conference contribution
AN - SCOPUS:85088379724
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020
Y2 - 28 April 2020 through 30 May 2020
ER -