Relaxation of strained InGaAs during molecular beam epitaxy

G. J. Whaley; P. I. Cohen

doi:10.1063/1.103966

Relaxation of strained InGaAs during molecular beam epitaxy

G. J. Whaley, P. I. Cohen

Electrical and Computer Engineering

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Abstract

Relaxation of strained In_xGa_1-xAs films grown on GaAs substrates has been measured in situ during molecular beam epitaxy growth by reflection high-energy electron diffraction (RHEED). Growth is found to be layer by layer up to a strain-dependent ''critical'' thickness where three-dimensional clusters with {114} facets form. The onset of cluster growth is simultaneous with lattice relaxation as measured by RHEED. The relaxation during growth is compared with the Dodson-Tsao model for strained-layer relaxation [Appl. Phys. Lett. 53, 1325 (1987)]. Two distinct mechanisms for relaxation were found depending on film strain. An activation energy for relaxation was measured to be 4.4 eV for a film strain of 2.3%. The relaxation deviated from the Dodson-Tsao model for nongrowth conditions.

Original language	English (US)
Pages (from-to)	144-146
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	2
DOIs	https://doi.org/10.1063/1.103966
State	Published - 1990

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@article{ad3b59c0ac3a4259a14ebcef2823dbd8,

title = "Relaxation of strained InGaAs during molecular beam epitaxy",

abstract = "Relaxation of strained InxGa1-xAs films grown on GaAs substrates has been measured in situ during molecular beam epitaxy growth by reflection high-energy electron diffraction (RHEED). Growth is found to be layer by layer up to a strain-dependent ''critical'' thickness where three-dimensional clusters with {114} facets form. The onset of cluster growth is simultaneous with lattice relaxation as measured by RHEED. The relaxation during growth is compared with the Dodson-Tsao model for strained-layer relaxation [Appl. Phys. Lett. 53, 1325 (1987)]. Two distinct mechanisms for relaxation were found depending on film strain. An activation energy for relaxation was measured to be 4.4 eV for a film strain of 2.3%. The relaxation deviated from the Dodson-Tsao model for nongrowth conditions.",

author = "Whaley, {G. J.} and Cohen, {P. I.}",

year = "1990",

doi = "10.1063/1.103966",

language = "English (US)",

volume = "57",

pages = "144--146",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Relaxation of strained InGaAs during molecular beam epitaxy

AU - Whaley, G. J.

AU - Cohen, P. I.

PY - 1990

Y1 - 1990

N2 - Relaxation of strained InxGa1-xAs films grown on GaAs substrates has been measured in situ during molecular beam epitaxy growth by reflection high-energy electron diffraction (RHEED). Growth is found to be layer by layer up to a strain-dependent ''critical'' thickness where three-dimensional clusters with {114} facets form. The onset of cluster growth is simultaneous with lattice relaxation as measured by RHEED. The relaxation during growth is compared with the Dodson-Tsao model for strained-layer relaxation [Appl. Phys. Lett. 53, 1325 (1987)]. Two distinct mechanisms for relaxation were found depending on film strain. An activation energy for relaxation was measured to be 4.4 eV for a film strain of 2.3%. The relaxation deviated from the Dodson-Tsao model for nongrowth conditions.

AB - Relaxation of strained InxGa1-xAs films grown on GaAs substrates has been measured in situ during molecular beam epitaxy growth by reflection high-energy electron diffraction (RHEED). Growth is found to be layer by layer up to a strain-dependent ''critical'' thickness where three-dimensional clusters with {114} facets form. The onset of cluster growth is simultaneous with lattice relaxation as measured by RHEED. The relaxation during growth is compared with the Dodson-Tsao model for strained-layer relaxation [Appl. Phys. Lett. 53, 1325 (1987)]. Two distinct mechanisms for relaxation were found depending on film strain. An activation energy for relaxation was measured to be 4.4 eV for a film strain of 2.3%. The relaxation deviated from the Dodson-Tsao model for nongrowth conditions.

UR - http://www.scopus.com/inward/record.url?scp=36549102183&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549102183&partnerID=8YFLogxK

U2 - 10.1063/1.103966

DO - 10.1063/1.103966

M3 - Article

AN - SCOPUS:36549102183

SN - 0003-6951

VL - 57

SP - 144

EP - 146

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Relaxation of strained InGaAs during molecular beam epitaxy

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