Relaxation measurements of the persistent photoconductivity in sulfur-doped a-Si:H

D. Quicker, J. Kakalios

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The slow relaxation of the persistent photoconductivity (PPC) effect in sulfur-doped hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and illumination time. The relaxation is found to be thermally activated, with an activation energy which varies with sulfur concentration, while illuminating the film for a longer time leads to a longer relaxation time. A correlation is observed between changes of the photoconductivity during illumination and the magnitude of the PPC effect following illumination. These effects are also observed in compensated a-Si:H, suggesting that the mechanism for the PPC effect is the same in both sulfur-doped a-Si:H and compensated a-Si:H. The presence of donor and compensating acceptor states in sulfur-doped a-Si:H could arise from valence alternation pair sulfur atom defects.

Original languageEnglish (US)
Pages (from-to)611-616
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996


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