The transients in plasma composition and ion flux due to changing chamber wall conditions during Cl2 plasma etching of Si were studied. Silicon chlorides present in the discharge during etching of Si react with residual O present in the discharge to coat the chamber walls with a thin glassy silicon oxychloride film. The time scale of the transients was determined by how fast the walls are covered with the silicon oxychloride film.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - May 2003|