Reduction of real-space transfer in depletion-mode dipole heterostructure field-effect transistors

J. Zou, Z. Abid, H. Dong, Anand Gopinath

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The real space transfer in depletion-mode dipole heterostructure field-effect transistors (HFETs) has been investigated both theoretically and experimentally. Theoretically, we demonstrate that parallel conduction will be substantially reduced in the dipole HFET and to a smaller extent in the planar-doped HFET when compared to the conventional HFET due to the increased carrier confinement. By measuring the cutoff frequency at various dc biases, the experimental results indicate that a reduced real space transfer effect occurs in the depletion-mode dipole HFETs.

Original languageEnglish (US)
Pages (from-to)2411-2413
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number21
DOIs
StatePublished - Dec 1 1991

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