Recombination processes in InxGa1-xN light-emitting diodes studied through optically detected magnetic resonance

E. R. Glaser, T. A. Kennedy, W. E. Carlos, P. P. Ruden, S. Nakamura

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Optically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the recombining electron and hole are found with strength that indicates significant charge separation and long lifetimes (>100 ns). The electron and hole g tensors are determined for green and extra-blue LEDs. The recombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at potential minima in the QW but spatially separated from the electrons.

Original languageEnglish (US)
Pages (from-to)3123-3125
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - 1998


Dive into the research topics of 'Recombination processes in In<sub>x</sub>Ga<sub>1-x</sub>N light-emitting diodes studied through optically detected magnetic resonance'. Together they form a unique fingerprint.

Cite this