TY - GEN
T1 - Recent developments in porous silicon substrates for RF/microwave applications
AU - Drayton, Rhonda Franklin
PY - 2004
Y1 - 2004
N2 - Highly integrated system design is sought in silicon (Si) substrates due to the potential cost savings from volume manufacturing. For GHz applications two research efforts in silicon have evolved, BiCMOS in SiGe and CMOS in Si, that utilize of high and low resistivity silicon materials, respectively. In order to integrate active and passive designs in CMOS grade substrates with conductive and insulating features, multilayer and substrate modification methods have been investigated. This paper will present an overview of one substrate modification method, porous silicon, and recent electrical characterization data of GHz interconnect performance on dielectric capped and oxide converted forms of the material. In addition, highlights of several RF circuit demonstrations will be presented on lumped element, active circuit, and packaging performance.
AB - Highly integrated system design is sought in silicon (Si) substrates due to the potential cost savings from volume manufacturing. For GHz applications two research efforts in silicon have evolved, BiCMOS in SiGe and CMOS in Si, that utilize of high and low resistivity silicon materials, respectively. In order to integrate active and passive designs in CMOS grade substrates with conductive and insulating features, multilayer and substrate modification methods have been investigated. This paper will present an overview of one substrate modification method, porous silicon, and recent electrical characterization data of GHz interconnect performance on dielectric capped and oxide converted forms of the material. In addition, highlights of several RF circuit demonstrations will be presented on lumped element, active circuit, and packaging performance.
KW - Coplanar waveguides
KW - Low resistivity silicon
KW - OPS
KW - Porous silicon
KW - Slow wave mode
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M3 - Conference contribution
AN - SCOPUS:20344407788
SN - 0780387031
T3 - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers
SP - 155
EP - 158
BT - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
A2 - Cressler, J.D.
A2 - Papapolymerou, J.
T2 - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers
Y2 - 8 September 2004 through 10 September 2004
ER -