Real-time control of etching processes: Experimental results

Jordan Berg; Ted K. Higman; Allen R. Tannenbaum

doi:10.1117/12.284645

Real-time control of etching processes: Experimental results

Jordan Berg, Ted K. Higman, Allen R. Tannenbaum

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A unified approach to the modelling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modelling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of inout data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection.

Original language	English (US)
Pages (from-to)	249-260
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3213
DOIs	https://doi.org/10.1117/12.284645
State	Published - 1997
Event	Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III - Austin, TX, United States Duration: Jan 10 1997 → Jan 10 1997

Keywords

Control
Curvature driven flows
Estimation
Etching
In-situ monitoring

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10.1117/12.284645

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@article{7f7da9de460a4a46aff919da1073e608,

title = "Real-time control of etching processes: Experimental results",

abstract = "A unified approach to the modelling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modelling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of inout data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection.",

keywords = "Control, Curvature driven flows, Estimation, Etching, In-situ monitoring",

author = "Jordan Berg and Higman, {Ted K.} and Tannenbaum, {Allen R.}",

year = "1997",

doi = "10.1117/12.284645",

language = "English (US)",

volume = "3213",

pages = "249--260",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III ; Conference date: 10-01-1997 Through 10-01-1997",

}

TY - JOUR

T1 - Real-time control of etching processes

T2 - Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III

AU - Berg, Jordan

AU - Higman, Ted K.

AU - Tannenbaum, Allen R.

PY - 1997

Y1 - 1997

N2 - A unified approach to the modelling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modelling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of inout data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection.

AB - A unified approach to the modelling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modelling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of inout data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection.

KW - Control

KW - Curvature driven flows

KW - Estimation

KW - Etching

KW - In-situ monitoring

UR - http://www.scopus.com/inward/record.url?scp=0008239336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0008239336&partnerID=8YFLogxK

U2 - 10.1117/12.284645

DO - 10.1117/12.284645

M3 - Conference article

AN - SCOPUS:0008239336

SN - 0277-786X

VL - 3213

SP - 249

EP - 260

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 10 January 1997 through 10 January 1997

ER -

Real-time control of etching processes: Experimental results

Abstract

Keywords

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