Real-time control of etching processes: Experimental results

Jordan Berg, Ted K. Higman, Allen R. Tannenbaum

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

A unified approach to the modelling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modelling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of inout data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection.

Original languageEnglish (US)
Pages (from-to)249-260
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3213
DOIs
StatePublished - Dec 1 1997
EventProcess, Equipment, and Materials Control in Integrated Circuit Manufacturing III - Austin, TX, United States
Duration: Jan 10 1997Jan 10 1997

Keywords

  • Control
  • Curvature driven flows
  • Estimation
  • Etching
  • In-situ monitoring

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