Real-space transfer by hot electron resonant tunneling

T. K. Higman; Jihong Chen; M. S. Hagedorn; F. Williamson

doi:10.1006/spmi.1993.1078

Real-space transfer by hot electron resonant tunneling

T. K. Higman
, Jihong Chen
, M. S. Hagedorn
, F. Williamson

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple AlAs/GaAs/AlAs double barrier structures.

Original language	English (US)
Pages (from-to)	397-400
Number of pages	4
Journal	Superlattices and Microstructures
Volume	13
Issue number	4
DOIs	https://doi.org/10.1006/spmi.1993.1078
State	Published - Jun 1993

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10.1006/spmi.1993.1078

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@article{c5d4b10742ff4d3e9c9fc718166697d0,

title = "Real-space transfer by hot electron resonant tunneling",

abstract = "Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple AlAs/GaAs/AlAs double barrier structures.",

author = "Higman, \{T. K.\} and Jihong Chen and Hagedorn, \{M. S.\} and F. Williamson",

year = "1993",

month = jun,

doi = "10.1006/spmi.1993.1078",

language = "English (US)",

volume = "13",

pages = "397--400",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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AU - Higman, T. K.

AU - Chen, Jihong

AU - Hagedorn, M. S.

AU - Williamson, F.

PY - 1993/6

Y1 - 1993/6

N2 - Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple AlAs/GaAs/AlAs double barrier structures.

AB - Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple AlAs/GaAs/AlAs double barrier structures.

UR - https://www.scopus.com/pages/publications/43949169529

UR - https://www.scopus.com/pages/publications/43949169529#tab=citedBy

U2 - 10.1006/spmi.1993.1078

DO - 10.1006/spmi.1993.1078

M3 - Article

AN - SCOPUS:43949169529

SN - 0749-6036

VL - 13

SP - 397

EP - 400

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Real-space transfer by hot electron resonant tunneling

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