Reactive-sputter deposition and structure of RuO2 films on sapphire and strontium titanate

Q. Wang, Wayne L. Gladfelter, D. Fennell Evans, Yue Fan, Alfonso Franciosi

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18 Scopus citations


Metallic films of RuO2 were deposited by reactive-sputtering deposition on single crystal substrates of Al2O3 (0001) and SrTiO3 (100) at room temperature and 450 °C. Measurement of the characteristic hysteresis loop revealed that the target's transition from a metal to a metal oxide surface occurred at a very high O2/Ar ratio (88%) under our experimental conditions. The hysteretical behavior of the transition was evaluated experimentally and was modeled. Resonance-enhanced Rutherford backscattering spectrometry established that the films deposited at 450 °C had an oxygen to ruthenium ratio of 1.97, while a slightly higher value of 2.08 was observed for the films grown at room temperature. The latter films were amorphous, whereas those grown at 450 °C exhibited a highly oriented polycrystalline microstructure. On SrTiO3 (100), the RuO2 (100) plane is parallel to the substrate surface, but no in-plane orientation was found. The same face, RuO2 (100), was also parallel to the surface of Al2O3 (0001), and the [001] direction of individual grains of RuO2 aligned with the three <1010> directions of the substrate to produce a threefold mosaic microstructure.

Original languageEnglish (US)
Pages (from-to)747-752
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - 1996


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