Reaction pathways of GaN (0001) growth from trimethylgallium and ammonia versus triethylgallium and hydrazine using first principle calculations

Keyphrases

• Ammonia 100%
• Gallium Nitride 100%
• Reaction Pathway 100%
• First-principles Calculations 100%
• Hydrazine 100%
• Trimethylgallium 100%
• Photonics 8%
• Methane 8%
• High Power 8%
• Methyl 8%
• Ethylene 8%
• Crystal Growth 8%
• Thermodynamics 8%
• Atomic Layer Deposition 8%
• Nitrogen Compounds 8%
• Dissociation 8%
• Process Requirements 8%
• Growth Process 8%
• Quality Process 8%
• Energy Barrier 8%
• Chemisorption 8%
• Reaction Mechanism 8%
• Ab Initio Calculations 8%
• Dehydrogenation 8%
• Reaction Limit 8%
• Abstraction Reaction 8%
• Diffusion Limit 8%
• Surface Interaction 8%
• Crystal Quality 8%
• Engineering Application 8%
• Adsorption Mechanism 8%
• Gallium 8%
• Wide Band Gap Semiconductors 8%
• Surface Deposition 8%
• Thin Film Growth 8%
• Metal-organic Chemical Vapor Deposition (MOCVD) 8%
• Deposition Mechanism 8%
• Adsorbate Coverage 8%
• Deposition Layer 8%
• High Temperature Operation 8%
• Low Temperature Growth 8%
• Nitrogen Precursor 8%
• Nitrogen Layer 8%
• Operation Device 8%
• Gallium Nitride Thin Film 8%
• Deposition Methods 8%
• Surface Hydrogen 8%

Material Science

• Gallium Nitride 100%
• Surface (Surface Science) 100%
• Adsorbate 20%
• Chemical Vapor Deposition 20%
• Dehydrogenation 20%
• Chemisorption 20%
• Ab Initio Calculation 20%
• Gallium 20%
• Thin Film Growth 20%
• Wide Bandgap Semiconductor 20%
• Thin Films 20%