Reaction Control in Amorphous Silicon Film Deposition by Hydrogen Chloride

Akihiro Takano, Takehito Wada, Shinji Fujikake, Takashi Yoshida, Tokio Ohto, Eray S. Aydil

Research output: Contribution to journalConference article

Abstract

HCl was added to SiH4 containing plasmas to grow a-Si:H(Cl) films with dangling bonds terminated with Cl instead of H. Bulk and surface infrared spectra, film thickness and optical band gap were examined by in situ multiple total internal reflection Fourier transform infrared spectroscopy and in situ spectroscopic ellipsometry. SiH2Cl2 was also used as a conventional Cl source for reference a-Si:H(Cl) film deposition experiments. The introduction of HCl does not affect the deposition rate significantly, and the deposited a-Si:H(Cl) films contain over 10 21cm-3 Cl atoms. HCl addition to the gas phase changes the surface compositions of the growing films drastically from higher silicon hydride to chlorinated lower hydride. The surface reaction control eliminates unfavorable hydride bonding structures such as SiH2 and/or SiH in voids in the deposited films. The a-Si:H(Cl) films deposited from mixtures of SiH4 and HCl do not show significant optical band gap widening in spite of containing over 1021cm-3 Cl atoms, a concentration that is comparable to that of hydrogen. In contrast, a conventional chlorine source of SiH2Cl2 increases the deposition rate significantly compared to HCl. The increase in the deposition rate results in monotonie decrease of the refractive index and the optical band gap widening.

Original languageEnglish (US)
Pages (from-to)521-526
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume762
StatePublished - Dec 1 2003
EventMaterials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States
Duration: Apr 22 2003Apr 25 2003

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