Abstract
Resistance fluctuations are reported for n-type doped hydrogenated amorphous silicon (a-Si:H) using a coplanar electrode configuration with effective sample volumes of 10-610-7 cm3. Random telegraph-switching noise is observed with fluctuations as large as R/R10-2 for the temperature range 350<T<425 K. Comparison of two-probe and four-probe measurements confirms that these results are not due to contact noise. The switching noise may result from inhomogeneous current paths arising from the hydrogen microstructure in the a-Si:H which change their resistance value as hydrogen atoms hop from one bonding configuration to another.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 8391-8394 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 44 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1991 |
Bibliographical note
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