Abstract
An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.
| Original language | English (US) |
|---|---|
| Article number | 263103 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 26 |
| DOIs | |
| State | Published - Dec 24 2012 |
Bibliographical note
Copyright:Copyright 2013 Elsevier B.V., All rights reserved.
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