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Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

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Abstract

An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

Original languageEnglish (US)
Article number263103
JournalApplied Physics Letters
Volume101
Issue number26
DOIs
StatePublished - Dec 24 2012

Bibliographical note

Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.

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