Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

Peng Li; Zheng You; Tianhong Cui

doi:10.1063/1.4773183

Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

Peng Li, Zheng You, Tianhong Cui

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

Original language	English (US)
Article number	263103
Journal	Applied Physics Letters
Volume	101
Issue number	26
DOIs	https://doi.org/10.1063/1.4773183
State	Published - Dec 24 2012

Bibliographical note

Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.

Publisher link

10.1063/1.4773183

Find It

Find It at U of M Libraries

Cite this

@article{aaaa62a6eaad4ccf9975f6cf0d79bb44,

title = "Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches",

abstract = "An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.",

author = "Peng Li and Zheng You and Tianhong Cui",

year = "2012",

month = dec,

day = "24",

doi = "10.1063/1.4773183",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

AU - Li, Peng

AU - You, Zheng

AU - Cui, Tianhong

PY - 2012/12/24

Y1 - 2012/12/24

N2 - An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

AB - An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

UR - http://www.scopus.com/inward/record.url?scp=84871780622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871780622&partnerID=8YFLogxK

U2 - 10.1063/1.4773183

DO - 10.1063/1.4773183

M3 - Article

AN - SCOPUS:84871780622

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263103

ER -

Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

Abstract

Bibliographical note

Publisher link

Find It

Other files and links

Fingerprint

Cite this