Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

Jing Kai Qin; Pai Ying Liao; Mengwei Si; Shiyuan Gao; Gang Qiu; Jie Jian; Qingxiao Wang; Si Qi Zhang; Shouyuan Huang; Adam Charnas; Yixiu Wang; Moon J. Kim; Wenzhuo Wu; Xianfan Xu; Hai Yan Wang; Li Yang; Yoke Khin Yap; Peide D. Ye

doi:10.1038/s41928-020-0365-4

Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

Jing Kai Qin, Pai Ying Liao, Mengwei Si, Shiyuan Gao, Gang Qiu, Jie Jian, Qingxiao Wang, Si Qi Zhang, Shouyuan Huang, Adam Charnas, Yixiu Wang, Moon J. Kim, Wenzhuo Wu, Xianfan Xu, Hai Yan Wang, Li Yang, Yoke Khin Yap, Peide D. Ye

Research output: Contribution to journal › Article › peer-review

146 Scopus citations

Abstract

Tellurium can form nanowires of helical atomic chains. With their unique one-dimensional van der Waals structure, these nanowires are expected to show physical and electronic properties that are remarkably different from those of bulk tellurium. Here, we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With this approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO₂, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5 × 10⁸ A cm⁻² that exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors with a diameter of only 2 nm.

Original language	English (US)
Pages (from-to)	141-147
Number of pages	7
Journal	Nature Electronics
Volume	3
Issue number	3
DOIs	https://doi.org/10.1038/s41928-020-0365-4
State	Published - Mar 1 2020
Externally published	Yes

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Publisher Copyright:
© 2020, The Author(s), under exclusive licence to Springer Nature Limited.

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Qin, J. K., Liao, P. Y., Si, M., Gao, S., Qiu, G., Jian, J., Wang, Q., Zhang, S. Q., Huang, S., Charnas, A., Wang, Y., Kim, M. J., Wu, W., Xu, X., Wang, H. Y., Yang, L., Khin Yap, Y., & Ye, P. D. (2020). Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes. Nature Electronics, 3(3), 141-147. https://doi.org/10.1038/s41928-020-0365-4

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abstract = "Tellurium can form nanowires of helical atomic chains. With their unique one-dimensional van der Waals structure, these nanowires are expected to show physical and electronic properties that are remarkably different from those of bulk tellurium. Here, we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With this approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5 × 108 A cm−2 that exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors with a diameter of only 2 nm.",

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AU - Jian, Jie

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AU - Zhang, Si Qi

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AU - Charnas, Adam

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AU - Kim, Moon J.

AU - Wu, Wenzhuo

AU - Xu, Xianfan

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AU - Yang, Li

AU - Khin Yap, Yoke

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N2 - Tellurium can form nanowires of helical atomic chains. With their unique one-dimensional van der Waals structure, these nanowires are expected to show physical and electronic properties that are remarkably different from those of bulk tellurium. Here, we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With this approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5 × 108 A cm−2 that exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors with a diameter of only 2 nm.

AB - Tellurium can form nanowires of helical atomic chains. With their unique one-dimensional van der Waals structure, these nanowires are expected to show physical and electronic properties that are remarkably different from those of bulk tellurium. Here, we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With this approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5 × 108 A cm−2 that exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors with a diameter of only 2 nm.

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Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

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