Raman and XPS characterization of vanadium oxide thin films deposited by reactive RF sputtering

E. Cazzanelli, G. Mariotto, S. Passerini, W. H. Smyrl, A. Gorenstein

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42 Scopus citations

Abstract

In this paper we report on Raman and XPS characterization of vanadium oxide thin films deposited by RF-sputtering. The samples were deposited by using a vanadium target in different oxygen fluxes, so that the stoichiometry (O/V ratio) of the oxide was varied. Several physical parameters of the films indicate a strong structural difference between the sample deposited at lower oxygen flux (1 see m) and those obtained with higher flux (from 1.25 to 9 sec m). The increase of O/V ratio corresponds to a lower crystallinity of the thin films as indicated by the initial lowering and the final disappearance of the characteristic Raman mode of V2O5 (crystal) at about 140 cm-1. For the highest flux samples new broad bands develop, typical of amorphous materials, both in polarized as well as in depolarized Raman spectra.

Original languageEnglish (US)
Pages (from-to)249-258
Number of pages10
JournalSolar Energy Materials and Solar Cells
Volume56
Issue number3-4
DOIs
StatePublished - Jan 1 1999

Keywords

  • RF sputtering
  • Raman and XPS characterization
  • Vanadium oxide thin films

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