Radiation tolerance of 65 nm CMOS transistors

M. Krohn, B. Bentele, D. C. Christian, J. P. Cumalat, G. Deptuch, F. Fahim, J. Hoff, A. Shenai, S. R. Wagner

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20 °C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

Original languageEnglish (US)
Article numberP12007
JournalJournal of Instrumentation
Issue number12
StatePublished - Dec 11 2015
Externally publishedYes


  • Front-end electronics for detector readout
  • Radiation-hard electronics


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