Radiation tolerance of 65 nm CMOS transistors

M. Krohn; B. Bentele; D. C. Christian; J. P. Cumalat; G. Deptuch; F. Fahim; J. Hoff; A. Shenai; S. R. Wagner

doi:10.1088/1748-0221/10/12/P12007

Radiation tolerance of 65 nm CMOS transistors

M. Krohn, B. Bentele, D. C. Christian, J. P. Cumalat, G. Deptuch, F. Fahim, J. Hoff, A. Shenai, S. R. Wagner

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20 °C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

Original language	English (US)
Article number	P12007
Journal	Journal of Instrumentation
Volume	10
Issue number	12
DOIs	https://doi.org/10.1088/1748-0221/10/12/P12007
State	Published - Dec 11 2015
Externally published	Yes

Keywords

Front-end electronics for detector readout
Radiation-hard electronics

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10.1088/1748-0221/10/12/P12007

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title = "Radiation tolerance of 65 nm CMOS transistors",

abstract = "We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20 °C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.",

keywords = "Front-end electronics for detector readout, Radiation-hard electronics",

author = "M. Krohn and B. Bentele and Christian, {D. C.} and Cumalat, {J. P.} and G. Deptuch and F. Fahim and J. Hoff and A. Shenai and Wagner, {S. R.}",

year = "2015",

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T1 - Radiation tolerance of 65 nm CMOS transistors

AU - Krohn, M.

AU - Bentele, B.

AU - Christian, D. C.

AU - Cumalat, J. P.

AU - Deptuch, G.

AU - Fahim, F.

AU - Hoff, J.

AU - Shenai, A.

AU - Wagner, S. R.

PY - 2015/12/11

Y1 - 2015/12/11

N2 - We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20 °C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

AB - We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20 °C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

KW - Front-end electronics for detector readout

KW - Radiation-hard electronics

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Radiation tolerance of 65 nm CMOS transistors

Abstract

Keywords

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