@inproceedings{c1f6b0834618480f981f9ca3a0b62990,
title = "Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates",
abstract = "The radiation response of strained SiGe p-MODFETs to 63 MeV protons is investigated for the first time. It is observed that both the drain current and the transconductance of the devices improve (increase) marginally following proton exposure. Low-frequency noise measurements were made both before and after irradiation to better understand the role of traps, and also improves following exposure. Localized strain in high Ge content SiGe layers of the device may affect the trap density after irradiation.",
keywords = "MODFET, SOS, SiGe, radiation effects",
author = "Anuj Madan and Mo, {Jiong Jiong} and Rajan Arora and Phillips, {Stanley D.} and Cressler, {John D.} and Marshall, {Paul W.} and Schrimpf, {Ronald D.} and Koester, {Steven J.}",
year = "2009",
month = dec,
day = "1",
doi = "10.1109/RADECS.2009.5994547",
language = "English (US)",
isbn = "9781457704932",
series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
pages = "24--28",
booktitle = "2009 European Conference on Radiation and Its Effects on Components and Systems",
note = "2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009 ; Conference date: 14-09-2009 Through 18-09-2009",
}