Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates

Anuj Madan, Jiong Jiong Mo, Rajan Arora, Stanley D. Phillips, John D. Cressler, Paul W. Marshall, Ronald D. Schrimpf, Steven J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The radiation response of strained SiGe p-MODFETs to 63 MeV protons is investigated for the first time. It is observed that both the drain current and the transconductance of the devices improve (increase) marginally following proton exposure. Low-frequency noise measurements were made both before and after irradiation to better understand the role of traps, and also improves following exposure. Localized strain in high Ge content SiGe layers of the device may affect the trap density after irradiation.

Original languageEnglish (US)
Title of host publication2009 European Conference on Radiation and Its Effects on Components and Systems
Subtitle of host publication10th RADECS Conference, RADECS 2009
Pages24-28
Number of pages5
DOIs
StatePublished - Dec 1 2009
Event2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009 - Bruges, Belgium
Duration: Sep 14 2009Sep 18 2009

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009
CountryBelgium
CityBruges
Period9/14/099/18/09

Keywords

  • MODFET
  • SOS
  • SiGe
  • radiation effects

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    Madan, A., Mo, J. J., Arora, R., Phillips, S. D., Cressler, J. D., Marshall, P. W., Schrimpf, R. D., & Koester, S. J. (2009). Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009 (pp. 24-28). [5994547] (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2009.5994547