Radiation-Dependent Hot-Carrier Effects

Robert K. Reich; Jay W. Schrankler; Dong Hyuk Ju; M. S. Holt; Gary D. Kirchner

doi:10.1109/EDL.1986.26356

Radiation-Dependent Hot-Carrier Effects

Robert K. Reich
, Jay W. Schrankler
, Dong Hyuk Ju
, M. S. Holt
, Gary D. Kirchner

Technology Commercialization

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.

Original language	English (US)
Pages (from-to)	235-237
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	4
DOIs	https://doi.org/10.1109/EDL.1986.26356
State	Published - Apr 1986

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10.1109/EDL.1986.26356

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@article{6a1db0bd74524697abe4515012f3a4cb,

title = "Radiation-Dependent Hot-Carrier Effects",

abstract = "The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.",

author = "Reich, \{Robert K.\} and Schrankler, \{Jay W.\} and Ju, \{Dong Hyuk\} and Holt, \{M. S.\} and Kirchner, \{Gary D.\}",

year = "1986",

month = apr,

doi = "10.1109/EDL.1986.26356",

language = "English (US)",

volume = "7",

pages = "235--237",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Radiation-Dependent Hot-Carrier Effects

AU - Reich, Robert K.

AU - Schrankler, Jay W.

AU - Ju, Dong Hyuk

AU - Holt, M. S.

AU - Kirchner, Gary D.

PY - 1986/4

Y1 - 1986/4

N2 - The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.

AB - The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.

UR - https://www.scopus.com/pages/publications/0022702966

UR - https://www.scopus.com/pages/publications/0022702966#tab=citedBy

U2 - 10.1109/EDL.1986.26356

DO - 10.1109/EDL.1986.26356

M3 - Article

AN - SCOPUS:0022702966

SN - 0741-3106

VL - 7

SP - 235

EP - 237

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Radiation-Dependent Hot-Carrier Effects

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