The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Apr 1986|