Radiation-Dependent Hot-Carrier Effects

Robert K. Reich, Jay W. Schrankler, Dong Hyuk Ju, M. S. Holt, Gary D. Kirchner

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET's has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.

Original languageEnglish (US)
Pages (from-to)235-237
Number of pages3
JournalIEEE Electron Device Letters
Volume7
Issue number4
DOIs
StatePublished - Apr 1986

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