Quasi-zero lattice mismatch and band alignment of BaTiO₃ on epitaxial (110)Ge

Keyphrases

• Epitaxial 100%
• Lattice Mismatch 100%
• Band Alignment 100%
• Barium Titanate 100%
• Heterointerface 28%
• MOSFET 14%
• Chemical Properties 14%
• Molecular Beam Epitaxy 14%
• N-channel 14%
• Interfacial Layer 14%
• Pulsed Laser 14%
• X-ray Photoelectron Spectroscopy 14%
• Band Gap Energy 14%
• Low Power Applications 14%
• P-channel 14%
• High-resolution X-ray Diffraction (HRXRD) 14%
• Valence Band Offset 14%
• Band Offset 14%
• Conduction Band Offset 14%
• Cross-sectional Transmission Electron Microscopy 14%
• Amorphous Nature 14%
• Structural Alignment 14%
• Alignment Properties 14%
• Carrier Confinement 14%
• Ge-based 14%
• Ge Layer 14%
• Growth Alignment 14%
• Low-power Transistors 14%
• BaTiO3 Layer 14%

Engineering

• Band Offset 100%
• Lattice Mismatch 100%
• Energy Engineering 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Ray Diffraction 33%
• Ray Photoelectron Spectroscopy 33%
• Interfacial Layer 33%
• Micrograph 33%
• High Resolution 33%
• Valence Band 33%
• Ge System 33%
• Band Gap 33%
• Conduction Band 33%
• Pulsed Laser 33%

Material Science

• Band Offset 100%
• Lattice Mismatch 100%
• Transistor 33%
• Molecular Beam Epitaxy 33%
• Transmission Electron Microscopy 33%
• Chemical Property 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Photoemission Spectroscopy 33%