Quasi-surface emission in vertical organic lightemitting transistors with network electrode

Chang Min Keum, In Ho Lee, Sin Hyung Lee, Gyu Jeong Lee, Min Hoi Kim, Sin Doo Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We demonstrate a vertical-type organic light-emitting transistor(VOLET) with a network electrode of closed topology for quasi-surfaceemission. In our VOLET, the spatial distribution of the surface emissiondepends primarily on the relative scale of the aperture in the networkelectrode to the characteristic length for the charge carrier recombination.Due to the closed topology in the network of the source electrode, thecharge transport and the resultant carrier recombination are substantiallyextended from individual network boundaries toward the correspondingaperture centers in the source electrode. The luminance was found to bewell-controlled by the gate voltage through an organic semiconductinglayer over the network source electrode.

Original languageEnglish (US)
Pages (from-to)14750-14756
Number of pages7
JournalOptics Express
Volume22
Issue number12
DOIs
StatePublished - Jun 16 2014

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transistors
electrodes
topology
luminance
charge carriers
spatial distribution
apertures
electric potential

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Quasi-surface emission in vertical organic lightemitting transistors with network electrode. / Keum, Chang Min; Lee, In Ho; Lee, Sin Hyung; Lee, Gyu Jeong; Kim, Min Hoi; Lee, Sin Doo.

In: Optics Express, Vol. 22, No. 12, 16.06.2014, p. 14750-14756.

Research output: Contribution to journalArticle

Keum, Chang Min ; Lee, In Ho ; Lee, Sin Hyung ; Lee, Gyu Jeong ; Kim, Min Hoi ; Lee, Sin Doo. / Quasi-surface emission in vertical organic lightemitting transistors with network electrode. In: Optics Express. 2014 ; Vol. 22, No. 12. pp. 14750-14756.
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