Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

X. Fu; Q. Shi; M. A. Zudov; Y. J. Chung; K. W. Baldwin; L. N. Pfeiffer; K. W. West

doi:10.1103/PhysRevB.98.205418

Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

X. Fu, Q. Shi, M. A. Zudov, Y. J. Chung, K. W. Baldwin, L. N. Pfeiffer, K. W. West

Physics and Astronomy (Twin Cities)

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Abstract

We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne>4×1011cm-2) which is expected to favor QHS orientation along the unconventional 110 crystal axis and along the in-plane magnetic field B. Surprisingly, we find that at B=0 QHSs in our samples are aligned along the 110 direction and can be reoriented only perpendicular to B. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B, while quantum confinement of the 2DEG likely plays an important role.

Original language	English (US)
Article number	205418
Journal	Physical Review B
Volume	98
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.98.205418
State	Published - Nov 26 2018

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© 2018 American Physical Society.

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abstract = "We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne>4×1011cm-2) which is expected to favor QHS orientation along the unconventional 110 crystal axis and along the in-plane magnetic field B. Surprisingly, we find that at B=0 QHSs in our samples are aligned along the 110 direction and can be reoriented only perpendicular to B. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B, while quantum confinement of the 2DEG likely plays an important role.",

author = "X. Fu and Q. Shi and Zudov, {M. A.} and Chung, {Y. J.} and Baldwin, {K. W.} and Pfeiffer, {L. N.} and West, {K. W.}",

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AU - Fu, X.

AU - Shi, Q.

AU - Zudov, M. A.

AU - Chung, Y. J.

AU - Baldwin, K. W.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne>4×1011cm-2) which is expected to favor QHS orientation along the unconventional 110 crystal axis and along the in-plane magnetic field B. Surprisingly, we find that at B=0 QHSs in our samples are aligned along the 110 direction and can be reoriented only perpendicular to B. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B, while quantum confinement of the 2DEG likely plays an important role.

AB - We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne>4×1011cm-2) which is expected to favor QHS orientation along the unconventional 110 crystal axis and along the in-plane magnetic field B. Surprisingly, we find that at B=0 QHSs in our samples are aligned along the 110 direction and can be reoriented only perpendicular to B. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B, while quantum confinement of the 2DEG likely plays an important role.

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Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

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