Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene

Gang Qiu, Chang Niu, Yixiu Wang, Mengwei Si, Zhuocheng Zhang, Wenzhuo Wu, Peide D. Ye

Research output: Contribution to journalArticlepeer-review

68 Scopus citations

Abstract

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly be observed through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable band gaps due to their accidental band-crossing origin. Here, we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the two-dimensional form of tellurium, possesses a chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial π Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors.

Original languageEnglish (US)
Pages (from-to)585-591
Number of pages7
JournalNature Nanotechnology
Volume15
Issue number7
DOIs
StatePublished - Jul 1 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2020, The Author(s), under exclusive licence to Springer Nature Limited.

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