Quantum behavior of graphene transistors near the scaling limit

Yanqing Wu, Vasili Perebeinos, Yu Ming Lin, Tony Low, Fengnian Xia, Phaedon Avouris

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50 Scopus citations


The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity, and of the on/off current ratio are investigated.

Original languageEnglish (US)
Pages (from-to)1417-1423
Number of pages7
JournalNano letters
Issue number3
StatePublished - Mar 14 2012


  • Fermi-level pinning
  • Graphene
  • ballistic transport
  • minimum conductivity
  • phase coherence
  • quantum interference


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