Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells

S. J. Koester, C. R. Bolognesi, M. J. Rooks, E. L. Hu, H. Kroemer

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Split-gate ballistic constrictions have been fabricated on InAs/AlSb quantum-well heterostructures. Sharp conductance steps of 2e2/h are observed at 4.2 K, while conductance plateaus persist up to 30 K. The sharp features and high temperature operation are made possible by the low effective mass (m*Γ= 0.023me) of InAs, and the closeness of the quantum well (20 nm) to the wafer surface.

Original languageEnglish (US)
Pages (from-to)1373-1375
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number12
DOIs
StatePublished - Dec 1 1993

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