Abstract
Split-gate ballistic constrictions have been fabricated on InAs/AlSb quantum-well heterostructures. Sharp conductance steps of 2e2/h are observed at 4.2 K, while conductance plateaus persist up to 30 K. The sharp features and high temperature operation are made possible by the low effective mass (m*Γ= 0.023me) of InAs, and the closeness of the quantum well (20 nm) to the wafer surface.
Original language | English (US) |
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Pages (from-to) | 1373-1375 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 12 |
DOIs | |
State | Published - 1993 |