QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.

A. Gopinath; C. C. Sanger; C. Paracchini; G. A.C. Jones

QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.

A. Gopinath
, C. C. Sanger
, C. Paracchini
, G. A.C. Jones

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.

Original language	English (US)
Pages (from-to)	456-462
Number of pages	7
Journal	[No source information available]
State	Published - Dec 1 1971

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title = "QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.",

abstract = "Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.",

author = "A. Gopinath and Sanger, \{C. C.\} and C. Paracchini and Jones, \{G. A.C.\}",

year = "1971",

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pages = "456--462",

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AU - Gopinath, A.

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AU - Paracchini, C.

AU - Jones, G. A.C.

PY - 1971/12/1

Y1 - 1971/12/1

N2 - Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.

AB - Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.

UR - https://www.scopus.com/pages/publications/0015165952

UR - https://www.scopus.com/pages/publications/0015165952#tab=citedBy

M3 - Article

AN - SCOPUS:0015165952

SP - 456

EP - 462

JO - [No source information available]

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ER -

QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.

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