QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.

A. Gopinath; C. C. Sanger; C. Paracchini; G. A.C. Jones

QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.

A. Gopinath, C. C. Sanger, C. Paracchini, G. A.C. Jones

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.

Original language	English (US)
Pages (from-to)	456-462
Number of pages	7
Journal	[No source information available]
State	Published - Dec 1 1971

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@article{b5ecc5c506d34de89ae8e4c2bef11fed,

title = "QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.",

abstract = "Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.",

author = "A. Gopinath and Sanger, {C. C.} and C. Paracchini and Jones, {G. A.C.}",

year = "1971",

month = dec,

day = "1",

language = "English (US)",

pages = "456--462",

journal = "[No source information available]",

}

TY - JOUR

T1 - QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.

AU - Gopinath, A.

AU - Sanger, C. C.

AU - Paracchini, C.

AU - Jones, G. A.C.

PY - 1971/12/1

Y1 - 1971/12/1

N2 - Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.

AB - Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.

UR - http://www.scopus.com/inward/record.url?scp=0015165952&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0015165952&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0015165952

SP - 456

EP - 462

JO - [No source information available]

JF - [No source information available]

ER -

QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.

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