Abstract
We investigate the IOFF vs. ION performance of black phosphorus (BP) MOSFETs with thin HfO2 gate dielectrics. ION and IOFF were found to increase with increasing the BP thickness, with IOFF increasing substantially at high drain-to-source voltage, VDS. Specifically, at VDS = -0.8 V, a body thickness < 7 nm is needed to achieve IOFF < 100 nA/μm. This work provides critical guidance for design of BP MOSFETs for future logic applications.
Original language | English (US) |
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Title of host publication | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 62-63 |
Number of pages | 2 |
ISBN (Electronic) | 9781509007264 |
DOIs | |
State | Published - Sep 27 2016 |
Event | 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: Jun 12 2016 → Jun 13 2016 |
Publication series
Name | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
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Other
Other | 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
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Country/Territory | United States |
City | Honolulu |
Period | 6/12/16 → 6/13/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.