Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance

Nazila Haratipour, Steven J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate the IOFF vs. ION performance of black phosphorus (BP) MOSFETs with thin HfO2 gate dielectrics. ION and IOFF were found to increase with increasing the BP thickness, with IOFF increasing substantially at high drain-to-source voltage, VDS. Specifically, at VDS = -0.8 V, a body thickness < 7 nm is needed to achieve IOFF < 100 nA/μm. This work provides critical guidance for design of BP MOSFETs for future logic applications.

Original languageEnglish (US)
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages62-63
Number of pages2
ISBN (Electronic)9781509007264
DOIs
StatePublished - Sep 27 2016
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: Jun 12 2016Jun 13 2016

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Other

Other21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
CountryUnited States
CityHonolulu
Period6/12/166/13/16

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