Pulsed-laser deposition of TiNi shape memory alloy thin films

X. Y. Chen; Y. F. Lu; Z. M. Ren; L. Zhang; J. P. Wang; T. Y.F. Liew

doi:10.1557/proc-672-o10.12

Pulsed-laser deposition of TiNi shape memory alloy thin films

X. Y. Chen, Y. F. Lu, Z. M. Ren, L. Zhang, J. P. Wang, T. Y.F. Liew

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Thin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is -20.8°C.

Original language	English (US)
Pages (from-to)	O10.12.1-O10.12.6
Journal	Materials Research Society Symposium - Proceedings
Volume	672
DOIs	https://doi.org/10.1557/proc-672-o10.12
State	Published - 2001
Event	Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures - San Francisco, CA, United States Duration: Apr 17 2001 → Apr 20 2001

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title = "Pulsed-laser deposition of TiNi shape memory alloy thin films",

abstract = "Thin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is -20.8°C.",

author = "Chen, {X. Y.} and Lu, {Y. F.} and Ren, {Z. M.} and L. Zhang and Wang, {J. P.} and Liew, {T. Y.F.}",

year = "2001",

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TY - JOUR

T1 - Pulsed-laser deposition of TiNi shape memory alloy thin films

AU - Chen, X. Y.

AU - Lu, Y. F.

AU - Ren, Z. M.

AU - Zhang, L.

AU - Wang, J. P.

AU - Liew, T. Y.F.

PY - 2001

Y1 - 2001

N2 - Thin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is -20.8°C.

AB - Thin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is -20.8°C.

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SP - O10.12.1-O10.12.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures

Y2 - 17 April 2001 through 20 April 2001

ER -

Pulsed-laser deposition of TiNi shape memory alloy thin films

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