Pulsed electrodeposition of Cu 2 ZnSnS 4 thin films: Effect of pulse potentials

K. V. Gurav, Y. K. Kim, S. W. Shin, M. P. Suryawanshi, N. L. Tarwal, U. V. Ghorpade, S. M. Pawar, S. A. Vanalakar, I. Y. Kim, J. H. Yun, P. S. Patil, J. H. Kim

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33 Scopus citations

Abstract

Cu 2 ZnSnS 4 (CZTS) thin films are electrodeposited on Mo substrate using pulsed electrodeposition (PED) at different pulse potentials. The pulse potential (V1) is varied from 0 V/SCE to -0.9 V/SCE and V2 fixed at -1.1 V/SCE. The effects of pulse potentials on the properties of CZTS thin films are investigated. Formation of secondary phases along with CZTS phase is evident for films deposited at low pulse potentials. The secondary phases seem to be reduced with increase in pulse potentials. The morphology of CZTS films is systematically evolved from agglomerated grains to compact one with increase in pulse potentials. The film deposited using optimized pulse potentials (V 1 - -0.9 V/SCE and V 2 - -1.1 V/SCE) exhibit prominent CZTS phase with nearly stoichiometric composition and has compact morphology with optical band gap energy of 1.46 eV.

Original languageEnglish (US)
Pages (from-to)192-196
Number of pages5
JournalApplied Surface Science
Volume334
DOIs
StatePublished - Apr 15 2015

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Keywords

  • Cu ZnSnS (CZTS) thin films
  • Pulsed electrodeposition
  • Thin film solar cells (TFSCs)

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