Properties of high-k/ultrahigh purity silicon nitride stacks

X. Shi; M. Shriver; Z. Zhang; T. Higman; S. A. Campbell

doi:10.1116/1.1759355

Properties of high-k/ultrahigh purity silicon nitride stacks

X. Shi, M. Shriver, Z. Zhang, T. Higman, S. A. Campbell

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The application of ultrahigh purity (UHP) silicon nitride as a barrier layer to reduce the reaction of high-k materials was discussed. UHP Si ₃₄ was grown by rapid thermal nitridation (RTN) in chemically scrubbed ammonia in an ultrahigh vacuum (UHV) chamber. It was found that the effective charge density of UHP Si ₃N ₄ increased with the thickness of nitride layer. The self-limiting thickness was found to increase by about 0.2 nm per 100°C nitridation temperature form 500 to 900°C.

Original language	English (US)
Pages (from-to)	1146-1151
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1759355
State	Published - Jul 2004

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abstract = "The application of ultrahigh purity (UHP) silicon nitride as a barrier layer to reduce the reaction of high-k materials was discussed. UHP Si 34 was grown by rapid thermal nitridation (RTN) in chemically scrubbed ammonia in an ultrahigh vacuum (UHV) chamber. It was found that the effective charge density of UHP Si 3N 4 increased with the thickness of nitride layer. The self-limiting thickness was found to increase by about 0.2 nm per 100°C nitridation temperature form 500 to 900°C.",

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AU - Zhang, Z.

AU - Higman, T.

AU - Campbell, S. A.

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AB - The application of ultrahigh purity (UHP) silicon nitride as a barrier layer to reduce the reaction of high-k materials was discussed. UHP Si 34 was grown by rapid thermal nitridation (RTN) in chemically scrubbed ammonia in an ultrahigh vacuum (UHV) chamber. It was found that the effective charge density of UHP Si 3N 4 increased with the thickness of nitride layer. The self-limiting thickness was found to increase by about 0.2 nm per 100°C nitridation temperature form 500 to 900°C.

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Properties of high-k/ultrahigh purity silicon nitride stacks

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