Properties of high K and extremely thin silicon nitride stacks

Z. Zhang; Y. Fedorenko; L. Truong; X. Shi; V. Afanas'ev; A. Stesmans; S. A. Campbell

Properties of high K and extremely thin silicon nitride stacks

Z. Zhang, Y. Fedorenko, L. Truong, X. Shi, V. Afanas'ev, A. Stesmans, S. A. Campbell

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of extremely thin barrier layers of high purity, UHV-grown thermal silicon nitride under MOCVD deposited HfO₂ were studied. Nitridation in the range of 0.2 to 1.2 nm was found to be highly reproducible, with the thickness well controlled by the nitridation temperature. The fixed charge in the stack appears to be concentrated at the interfaces between materials. Interface state density (D_n) measurements show that very thin nitrides have a better interface than thicker nitrides. However, all samples exposed to nitrogen show an increase in interface states in the lower part of the gap compared to samples without nitrogen exposure. Evidence suggests that very thin layers of Si₃N₄ may be oxidized by dilute O₂ anneals. Transistors also show that the thinner the nitride, the less the impact on the inversion layer mobility.

Original language	English (US)
Title of host publication	Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium
Editors	R.E. Sah, M.J. Deen, J. Zhang, J. Yota, Y. Kamakura
Pages	375-388
Number of pages	14
Volume	PV 2005-01
State	Published - Dec 1 2005
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	5/16/05 → 5/20/05

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Zhang, Z., Fedorenko, Y., Truong, L., Shi, X., Afanas'ev, V., Stesmans, A., & Campbell, S. A. (2005). Properties of high K and extremely thin silicon nitride stacks. In R. E. Sah, M. J. Deen, J. Zhang, J. Yota, & Y. Kamakura (Eds.), Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium (Vol. PV 2005-01, pp. 375-388)

Properties of high K and extremely thin silicon nitride stacks. / Zhang, Z.; Fedorenko, Y.; Truong, L. et al.
Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium. ed. / R.E. Sah; M.J. Deen; J. Zhang; J. Yota; Y. Kamakura. Vol. PV 2005-01 2005. p. 375-388.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, Z, Fedorenko, Y, Truong, L, Shi, X, Afanas'ev, V, Stesmans, A & Campbell, SA 2005, Properties of high K and extremely thin silicon nitride stacks. in RE Sah, MJ Deen, J Zhang, J Yota & Y Kamakura (eds), Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium. vol. PV 2005-01, pp. 375-388, 207th ECS Meeting, Quebec, Canada, 5/16/05.

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AU - Campbell, S. A.

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N2 - The effects of extremely thin barrier layers of high purity, UHV-grown thermal silicon nitride under MOCVD deposited HfO2 were studied. Nitridation in the range of 0.2 to 1.2 nm was found to be highly reproducible, with the thickness well controlled by the nitridation temperature. The fixed charge in the stack appears to be concentrated at the interfaces between materials. Interface state density (Dn) measurements show that very thin nitrides have a better interface than thicker nitrides. However, all samples exposed to nitrogen show an increase in interface states in the lower part of the gap compared to samples without nitrogen exposure. Evidence suggests that very thin layers of Si3N4 may be oxidized by dilute O2 anneals. Transistors also show that the thinner the nitride, the less the impact on the inversion layer mobility.

AB - The effects of extremely thin barrier layers of high purity, UHV-grown thermal silicon nitride under MOCVD deposited HfO2 were studied. Nitridation in the range of 0.2 to 1.2 nm was found to be highly reproducible, with the thickness well controlled by the nitridation temperature. The fixed charge in the stack appears to be concentrated at the interfaces between materials. Interface state density (Dn) measurements show that very thin nitrides have a better interface than thicker nitrides. However, all samples exposed to nitrogen show an increase in interface states in the lower part of the gap compared to samples without nitrogen exposure. Evidence suggests that very thin layers of Si3N4 may be oxidized by dilute O2 anneals. Transistors also show that the thinner the nitride, the less the impact on the inversion layer mobility.

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Properties of high K and extremely thin silicon nitride stacks

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