Properties of high K and extremely thin silicon nitride stacks

Z. Zhang, Y. Fedorenko, L. Truong, X. Shi, V. Afanas'ev, A. Stesmans, S. A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The effects of extremely thin barrier layers of high purity, UHV-grown thermal silicon nitride under MOCVD deposited HfO2 were studied. Nitridation in the range of 0.2 to 1.2 nm was found to be highly reproducible, with the thickness well controlled by the nitridation temperature. The fixed charge in the stack appears to be concentrated at the interfaces between materials. Interface state density (Dn) measurements show that very thin nitrides have a better interface than thicker nitrides. However, all samples exposed to nitrogen show an increase in interface states in the lower part of the gap compared to samples without nitrogen exposure. Evidence suggests that very thin layers of Si3N4 may be oxidized by dilute O2 anneals. Transistors also show that the thinner the nitride, the less the impact on the inversion layer mobility.

Original languageEnglish (US)
Title of host publicationSilicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium
EditorsR.E. Sah, M.J. Deen, J. Zhang, J. Yota, Y. Kamakura
Number of pages14
VolumePV 2005-01
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005


Other207th ECS Meeting


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