Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition

Z. M. Ren, Y. F. Lu, Z. H. Mai, B. A. Cheong, S. K. Chow, J. P. Wang, T. C. Chong

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Boron-Carbon-Nitrogen BxCyNz thin films were deposited by excimer laser ablation of boron carbide (B4C) under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by X-ray photoelectron spectroscopy (XPS), Raman and infrared spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.

Original languageEnglish (US)
Pages (from-to)520-528
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3618
StatePublished - Dec 1 1999
EventProceedings of the 1999 Laser Applications in Microelectronic and Optoelectronic Manufacturing IV (LAMOM-IV) - San Jose, CA, USA
Duration: Jan 25 1999Jan 27 1999

Fingerprint

Pulsed Laser Deposition
Boron
Pulsed laser deposition
Ternary
Nitrogen
pulsed laser deposition
Thin Films
Carbon
boron
Ion beams
nitrogen
Thin films
nitrogen ions
carbon
ion beams
thin films
bombardment
Ellipsometry
Boron carbide
boron carbides

Cite this

Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition. / Ren, Z. M.; Lu, Y. F.; Mai, Z. H.; Cheong, B. A.; Chow, S. K.; Wang, J. P.; Chong, T. C.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3618, 01.12.1999, p. 520-528.

Research output: Contribution to journalConference article

Ren, Z. M. ; Lu, Y. F. ; Mai, Z. H. ; Cheong, B. A. ; Chow, S. K. ; Wang, J. P. ; Chong, T. C. / Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition. In: Proceedings of SPIE - The International Society for Optical Engineering. 1999 ; Vol. 3618. pp. 520-528.
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abstract = "Boron-Carbon-Nitrogen BxCyNz thin films were deposited by excimer laser ablation of boron carbide (B4C) under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by X-ray photoelectron spectroscopy (XPS), Raman and infrared spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.",
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AU - Ren, Z. M.

AU - Lu, Y. F.

AU - Mai, Z. H.

AU - Cheong, B. A.

AU - Chow, S. K.

AU - Wang, J. P.

AU - Chong, T. C.

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N2 - Boron-Carbon-Nitrogen BxCyNz thin films were deposited by excimer laser ablation of boron carbide (B4C) under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by X-ray photoelectron spectroscopy (XPS), Raman and infrared spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.

AB - Boron-Carbon-Nitrogen BxCyNz thin films were deposited by excimer laser ablation of boron carbide (B4C) under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by X-ray photoelectron spectroscopy (XPS), Raman and infrared spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.

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