Properties of amorphous semiconducting multilayer films

J. Kakalios, H. Fritzsche, N. Ibaraki, S. R. Ovshinsky

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Abstract

The structural, optical, and electrical properties of amorphous multilayer films containing up to 180 double layers of a-Si:H/a-SiNx and a-Si:H/a-SiOx were studied. For a-Si:H layer thickness d>100 A ̊ the transport properties are dominated by space-charge doping with a-SiNx positive and a-SiOx negatively charged. For d<50 A ̊ quantum-well effects increase the optical and electrical gaps. A d=12 A ̊ multilayer film shows no evidence for the predicted loss of extended states in two-dimensional disordered systems.

Original languageEnglish (US)
Pages (from-to)339-344
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume66
Issue number1-2
DOIs
StatePublished - Jul 1984

Bibliographical note

Funding Information:
layers offer the opportunity for studying the effect of high internal electric * Supported by NSF DMR 8009225 and Energy Conversion Devices, Inc. + Bell Labs. Ph.D. Scholar. t Toshiba Corp. Fellow; present address - Toshiba Electron Device Eng. Lab. Yokohama, Japan.

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