Properties of amorphous semiconducting multilayer films

J. Kakalios; H. Fritzsche; N. Ibaraki; S. R. Ovshinsky

doi:10.1016/0022-3093(84)90341-7

Properties of amorphous semiconducting multilayer films

J. Kakalios, H. Fritzsche, N. Ibaraki, S. R. Ovshinsky

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

98 Scopus citations

Abstract

The structural, optical, and electrical properties of amorphous multilayer films containing up to 180 double layers of a-Si:H/a-SiN_x and a-Si:H/a-SiO_x were studied. For a-Si:H layer thickness d>100 A ̊ the transport properties are dominated by space-charge doping with a-SiN_x positive and a-SiO_x negatively charged. For d<50 A ̊ quantum-well effects increase the optical and electrical gaps. A d=12 A ̊ multilayer film shows no evidence for the predicted loss of extended states in two-dimensional disordered systems.

Original language	English (US)
Pages (from-to)	339-344
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	66
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-3093(84)90341-7
State	Published - Jul 1984

Bibliographical note

Funding Information:
layers offer the opportunity for studying the effect of high internal electric * Supported by NSF DMR 8009225 and Energy Conversion Devices, Inc. + Bell Labs. Ph.D. Scholar. t Toshiba Corp. Fellow; present address - Toshiba Electron Device Eng. Lab. Yokohama, Japan.

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title = "Properties of amorphous semiconducting multilayer films",

abstract = "The structural, optical, and electrical properties of amorphous multilayer films containing up to 180 double layers of a-Si:H/a-SiNx and a-Si:H/a-SiOx were studied. For a-Si:H layer thickness d>100 A ̊ the transport properties are dominated by space-charge doping with a-SiNx positive and a-SiOx negatively charged. For d<50 A ̊ quantum-well effects increase the optical and electrical gaps. A d=12 A ̊ multilayer film shows no evidence for the predicted loss of extended states in two-dimensional disordered systems.",

author = "J. Kakalios and H. Fritzsche and N. Ibaraki and Ovshinsky, \{S. R.\}",

note = "Funding Information: layers offer the opportunity for studying the effect of high internal electric * Supported by NSF DMR 8009225 and Energy Conversion Devices, Inc. + Bell Labs. Ph.D. Scholar. t Toshiba Corp. Fellow; present address - Toshiba Electron Device Eng. Lab. Yokohama, Japan.",

year = "1984",

month = jul,

doi = "10.1016/0022-3093(84)90341-7",

language = "English (US)",

volume = "66",

pages = "339--344",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Properties of amorphous semiconducting multilayer films

AU - Kakalios, J.

AU - Fritzsche, H.

AU - Ibaraki, N.

AU - Ovshinsky, S. R.

N1 - Funding Information: layers offer the opportunity for studying the effect of high internal electric * Supported by NSF DMR 8009225 and Energy Conversion Devices, Inc. + Bell Labs. Ph.D. Scholar. t Toshiba Corp. Fellow; present address - Toshiba Electron Device Eng. Lab. Yokohama, Japan.

PY - 1984/7

Y1 - 1984/7

N2 - The structural, optical, and electrical properties of amorphous multilayer films containing up to 180 double layers of a-Si:H/a-SiNx and a-Si:H/a-SiOx were studied. For a-Si:H layer thickness d>100 A ̊ the transport properties are dominated by space-charge doping with a-SiNx positive and a-SiOx negatively charged. For d<50 A ̊ quantum-well effects increase the optical and electrical gaps. A d=12 A ̊ multilayer film shows no evidence for the predicted loss of extended states in two-dimensional disordered systems.

AB - The structural, optical, and electrical properties of amorphous multilayer films containing up to 180 double layers of a-Si:H/a-SiNx and a-Si:H/a-SiOx were studied. For a-Si:H layer thickness d>100 A ̊ the transport properties are dominated by space-charge doping with a-SiNx positive and a-SiOx negatively charged. For d<50 A ̊ quantum-well effects increase the optical and electrical gaps. A d=12 A ̊ multilayer film shows no evidence for the predicted loss of extended states in two-dimensional disordered systems.

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U2 - 10.1016/0022-3093(84)90341-7

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-2

ER -

Properties of amorphous semiconducting multilayer films

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