@inproceedings{9c8025aaf9e74d66a06216634ee56aa4,
title = "Program/erase speed, endurance, retention, and disturbance characteristics of single-poly embedded flash cells",
abstract = "N-channel and P-channel single-poly embedded flash (eflash) memory cells were implemented in a standard CMOS logic process. Among the different configurations based on standard I/O devices, the N-channel cell with a PMOS-PMOS-NMOS combo and the P-channel cell with an NMOS-NMOS-PMOS combo were found to be most attractive in terms of program/erase performance, while the cell with a coupling device having P+ poly showed longer retention characteristic than the cells with a coupling device having N+ poly. Negligible program disturbance and floating gate coupling were observed in all cell types.",
keywords = "Embedded Flash, Flash Program/Erase, Flash Reliability, Single-Poly Embedded Flash Cell",
author = "Song, \{Seung Hwan\} and Jongyeon Kim and Kim, \{Chris H.\}",
year = "2013",
month = aug,
day = "7",
doi = "10.1109/IRPS.2013.6532095",
language = "English (US)",
isbn = "9781479901135",
series = "IEEE International Reliability Physics Symposium Proceedings",
booktitle = "2013 IEEE International Reliability Physics Symposium, IRPS 2013",
note = "2013 IEEE International Reliability Physics Symposium, IRPS 2013 ; Conference date: 14-04-2013 Through 18-04-2013",
}