Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without introducing lattice distortions or disorder, as is the case for chemical doping. The approach is experimentally tested using ultrathin (2.5 nm) NdNiO3 films that are epitaxially grown on La-doped SrTiO 3 films. We show that remote doping systematically changes the charge carrier density in the NdNiO3 film and causes a moderate shift in the metal-insulator transition temperature. These results are discussed in the context of theoretical models of this class of materials exhibiting a metal-insulator transition.
Bibliographical noteFunding Information:
This work was supported by a MURI program of the Army Research Office (Grant No. W911-NF-09-1-0398). We thank SungBin Lee and Andy Millis for many useful discussions.