Probing Metastable Space-Charge Potentials in a Wide Band Gap Semiconductor

Artur Lozovoi, Harishankar Jayakumar, Damon Daw, Ayesha Lakra, Carlos A. Meriles

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

While the study of space-charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide band gap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape- A nd concomitant field-can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space-charge field, which we then exploit to show space-charge-induced carrier guiding.

Original languageEnglish (US)
Article number256602
JournalPhysical review letters
Volume125
Issue number25
DOIs
StatePublished - Dec 18 2020

Bibliographical note

Funding Information:
The authors acknowledge support from the National Science Foundation through Grant No. NSF-1914945 and from Research Corporation for Science Advancement through a FRED Award; they also acknowledge access to the facilities and research infrastructure of the NSF CREST IDEALS, Grant No. NSF-HRD-1547830. This research was supported, in part, under National Science Foundation Grants No. CNS-0958379, No. CNS-0855217, and No. ACI-1126113 and the City University of New York High Performance Computing Center at the College of Staten Island.

Publisher Copyright:
© 2020 American Physical Society.

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