Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic

Kihyon Hong; Se Hyun Kim; Keun Hyung Lee; C. Daniel Frisbie

doi:10.1002/adma.201300211

Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic

Kihyon Hong
, Se Hyun Kim
, Keun Hyung Lee
, C. Daniel Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

146 Scopus citations

Abstract

Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm^-2 V^-1 s^-1), low operation voltage (<2 V), and good electrical/mechanical stabilities.

Original language	English (US)
Pages (from-to)	3413-3418
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	25
DOIs	https://doi.org/10.1002/adma.201300211
State	Published - Jul 5 2013

Keywords

electrolyte gated transistors (EGTs)
flexible substrates
ion-gel gate insulators
printed ZnO transistors
thin-film transistors

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10.1002/adma.201300211

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title = "Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic",

abstract = "Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm-2 V-1 s-1), low operation voltage (<2 V), and good electrical/mechanical stabilities.",

keywords = "electrolyte gated transistors (EGTs), flexible substrates, ion-gel gate insulators, printed ZnO transistors, thin-film transistors",

author = "Kihyon Hong and Kim, \{Se Hyun\} and Lee, \{Keun Hyung\} and Frisbie, \{C. Daniel\}",

year = "2013",

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doi = "10.1002/adma.201300211",

language = "English (US)",

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T1 - Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic

AU - Hong, Kihyon

AU - Kim, Se Hyun

AU - Lee, Keun Hyung

AU - Frisbie, C. Daniel

PY - 2013/7/5

Y1 - 2013/7/5

N2 - Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm-2 V-1 s-1), low operation voltage (<2 V), and good electrical/mechanical stabilities.

AB - Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm-2 V-1 s-1), low operation voltage (<2 V), and good electrical/mechanical stabilities.

KW - electrolyte gated transistors (EGTs)

KW - flexible substrates

KW - ion-gel gate insulators

KW - printed ZnO transistors

KW - thin-film transistors

UR - https://www.scopus.com/pages/publications/84879636081

UR - https://www.scopus.com/pages/publications/84879636081#tab=citedBy

U2 - 10.1002/adma.201300211

DO - 10.1002/adma.201300211

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AN - SCOPUS:84879636081

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VL - 25

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EP - 3418

JO - Advanced Materials

JF - Advanced Materials

IS - 25

ER -

Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic

Abstract

Keywords

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