Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic

Keyphrases

• Poly(3-hexylthiophene) (P3HT) 100%
• EGFET 100%
• Parasitic Capacitance 60%
• Electrolyte 40%
• Low Dielectric 40%
• Double Layer Formation 40%
• Electric Double Layer 40%
• Gate Dielectric 20%
• Supply Voltage 20%
• Low Contact Resistance 20%
• Electrode Surface 20%
• Switching Frequency 20%
• High Transconductance 20%
• Low-voltage Operation 20%
• Operational Stability 20%
• Electrolyte Interface 20%
• Dynamic Switching 20%
• Switching Performance 20%
• Double-layer Capacitance 20%
• Electrolyte Layer 20%
• Dielectric Blocks 20%
• Source-drain Electrode 20%

Engineering

• Parasitic Capacitance 100%
• Dielectrics 66%
• Electric Double Layer 66%
• Drain Electrode 33%
• Electrolyte Interface 33%
• Gate Dielectric 33%
• Switching Frequency 33%
• Electrode Surface 33%
• Double Layer 33%
• Electrolyte Layer 33%
• Dynamic Switching 33%
• Supply Voltage 33%

Material Science

• Transistor 100%
• Capacitance 80%
• Dielectric Material 60%
• Contact Resistance 20%
• Surface (Surface Science) 20%