Abstract
Using hydrostatic pressure, we have transformed GaAs into an indirect band-gap semiconductor with a conduction-band minimum near the X point of the Brillouin zone. Ground to bound excited-state transitions of X-point group-IV donors in GaAs are investigated using broadband far-infrared Fourier-transform absorption spectroscopy.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 10515-10518 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 55 |
| Issue number | 16 |
| DOIs | |
| State | Published - 1997 |