Pressure-induced shallow donor transformations in gallium arsenide

Leonardo Hsu, S. Zehender, E. Bauser, E. Haller

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Using hydrostatic pressure, we have transformed GaAs into an indirect band-gap semiconductor with a conduction-band minimum near the X point of the Brillouin zone. Ground to bound excited-state transitions of X-point group-IV donors in GaAs are investigated using broadband far-infrared Fourier-transform absorption spectroscopy.

Original languageEnglish (US)
Pages (from-to)10515-10518
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume55
Issue number16
DOIs
StatePublished - Jan 1 1997

Fingerprint Dive into the research topics of 'Pressure-induced shallow donor transformations in gallium arsenide'. Together they form a unique fingerprint.

Cite this