Pressure-induced shallow donor transformations in gallium arsenide

Leonardo Hsu, S. Zehender, E. Bauser, E. Haller

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Using hydrostatic pressure, we have transformed GaAs into an indirect band-gap semiconductor with a conduction-band minimum near the X point of the Brillouin zone. Ground to bound excited-state transitions of X-point group-IV donors in GaAs are investigated using broadband far-infrared Fourier-transform absorption spectroscopy.

Original languageEnglish (US)
Pages (from-to)10515-10518
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - 1997


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