Abstract
Using hydrostatic pressure, we have transformed GaAs into an indirect band-gap semiconductor with a conduction-band minimum near the X point of the Brillouin zone. Ground to bound excited-state transitions of X-point group-IV donors in GaAs are investigated using broadband far-infrared Fourier-transform absorption spectroscopy.
Original language | English (US) |
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Pages (from-to) | 10515-10518 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 55 |
Issue number | 16 |
DOIs | |
State | Published - Jan 1 1997 |