Abstract
We have measured the transport properties of InGaAs/InP heterostructures where donor-like native defects incorporated in a low temperature grown InP barrier are used as a source of electrons. Conductance of such structures shows comparable contributions from low mobility electrons in the InP barrier and from the two-dimensional electron gas (2DEG) at the heterostructure interface. We used high hydrostatic pressure to eliminate the low mobility conductance and were able to determine the parameters of two-dimensional electron gas. We find that the highest two-dimensional electron mobility of 3 × 104 cm2/Vs is determined by the scattering from the background ionized impurities located in the InGaAs quantum well.
Original language | English (US) |
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Pages (from-to) | 813-818 |
Number of pages | 6 |
Journal | Materials Science Forum |
Volume | 258-263 |
Issue number | PART 2 |
DOIs | |
State | Published - 1997 |
Keywords
- Heterostructure
- InGaAs
- InP
- Pressure