Pressure dependent two-dimensional electron transport in defect doped InGaAs/InP heterostructures

D. Wasik, L. Dmowski, J. Mikucki, J. Lusakowski, L. Hsu, W. Walukiewicz, W. G. Bi, C. W. Tu

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Abstract

We have measured the transport properties of InGaAs/InP heterostructures where donor-like native defects incorporated in a low temperature grown InP barrier are used as a source of electrons. Conductance of such structures shows comparable contributions from low mobility electrons in the InP barrier and from the two-dimensional electron gas (2DEG) at the heterostructure interface. We used high hydrostatic pressure to eliminate the low mobility conductance and were able to determine the parameters of two-dimensional electron gas. We find that the highest two-dimensional electron mobility of 3 × 104 cm2/Vs is determined by the scattering from the background ionized impurities located in the InGaAs quantum well.

Original languageEnglish (US)
Pages (from-to)813-818
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue numberPART 2
DOIs
StatePublished - Jan 1 1997

Keywords

  • Heterostructure
  • InGaAs
  • InP
  • Pressure

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    Wasik, D., Dmowski, L., Mikucki, J., Lusakowski, J., Hsu, L., Walukiewicz, W., Bi, W. G., & Tu, C. W. (1997). Pressure dependent two-dimensional electron transport in defect doped InGaAs/InP heterostructures. Materials Science Forum, 258-263(PART 2), 813-818. https://doi.org/10.4028/www.scientific.net/msf.258-263.813