Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

H. Chen; Q. Q. Lei; L. B. Li; Y. Zang; G. Q. Zhang; C. J. Xia; C. H. Dai; J. H. Cho

Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

H. Chen
, Q. Q. Lei
, L. B. Li
, Y. Zang
, G. Q. Zhang
, C. J. Xia
, C. H. Dai
, J. H. Cho

Research output: Contribution to journal › Article › peer-review

Abstract

Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm², the photocurrent and the open-circuit voltage are J_ph=4.27nA and V_OC=0.035V, respectively.

Original language	English (US)
Pages (from-to)	606-608
Number of pages	3
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	13
Issue number	11-12
State	Published - 2019

Bibliographical note

Funding Information:
This work was Supported financially by the National Natural Science Foundation of China (Grant No. 51402230, 11975176), the Project Supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083), Scientific Research Program Funded by Shaanxi Provincial Education Department (Grant No. 14JK1302).

Publisher Copyright:
© 2019, National Institute of Optoelectronics. All rights reserved.

Keywords

4H-SiC
Graphene
Heterojunction
Raman spectra
Si nanowires

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@article{133237f49b764da6b8773446ebf56ea9,

title = "Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)",

abstract = "Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively.",

keywords = "4H-SiC, Graphene, Heterojunction, Raman spectra, Si nanowires",

author = "H. Chen and Lei, \{Q. Q.\} and Li, \{L. B.\} and Y. Zang and Zhang, \{G. Q.\} and Xia, \{C. J.\} and Dai, \{C. H.\} and Cho, \{J. H.\}",

note = "Funding Information: This work was Supported financially by the National Natural Science Foundation of China (Grant No. 51402230, 11975176), the Project Supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083), Scientific Research Program Funded by Shaanxi Provincial Education Department (Grant No. 14JK1302). Publisher Copyright: {\textcopyright} 2019, National Institute of Optoelectronics. All rights reserved.",

year = "2019",

language = "English (US)",

volume = "13",

pages = "606--608",

journal = "Optoelectronics and Advanced Materials, Rapid Communications",

issn = "1842-6573",

publisher = "National Institute of Optoelectronics",

number = "11-12",

}

TY - JOUR

T1 - Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

AU - Chen, H.

AU - Lei, Q. Q.

AU - Li, L. B.

AU - Zang, Y.

AU - Zhang, G. Q.

AU - Xia, C. J.

AU - Dai, C. H.

AU - Cho, J. H.

N1 - Funding Information: This work was Supported financially by the National Natural Science Foundation of China (Grant No. 51402230, 11975176), the Project Supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083), Scientific Research Program Funded by Shaanxi Provincial Education Department (Grant No. 14JK1302). Publisher Copyright: © 2019, National Institute of Optoelectronics. All rights reserved.

PY - 2019

Y1 - 2019

N2 - Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively.

AB - Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively.

KW - 4H-SiC

KW - Graphene

KW - Heterojunction

KW - Raman spectra

KW - Si nanowires

UR - https://www.scopus.com/pages/publications/85079729170

UR - https://www.scopus.com/pages/publications/85079729170#tab=citedBy

M3 - Article

AN - SCOPUS:85079729170

SN - 1842-6573

VL - 13

SP - 606

EP - 608

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 11-12

ER -

Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

Abstract

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