Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

H. Chen, Q. Q. Lei, L. B. Li, Y. Zang, G. Q. Zhang, C. J. Xia, C. H. Dai, J. H. Cho

Research output: Contribution to journalArticlepeer-review


Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of <111>. The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively.

Original languageEnglish (US)
Pages (from-to)606-608
Number of pages3
JournalOptoelectronics and Advanced Materials, Rapid Communications
Issue number11-12
StatePublished - 2019

Bibliographical note

Funding Information:
This work was Supported financially by the National Natural Science Foundation of China (Grant No. 51402230, 11975176), the Project Supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083), Scientific Research Program Funded by Shaanxi Provincial Education Department (Grant No. 14JK1302).

Publisher Copyright:
© 2019, National Institute of Optoelectronics. All rights reserved.


  • 4H-SiC
  • Graphene
  • Heterojunction
  • Raman spectra
  • Si nanowires


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