Preparation of SiC/SiNWs heterostructure on 4HSiC(0001)

Yuan Zang; Hong Chen; Lianbi Li; Qianqian Lei; Jeong Hyun Cho

doi:10.1109/EDSSC.2019.8754462

Preparation of SiC/SiNWs heterostructure on 4HSiC(0001)

Yuan Zang
, Hong Chen
, Lianbi Li
, Qianqian Lei
, Jeong Hyun Cho

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Silicon nanowires can be used as the visible -near infrared absorption layer in SiC/SiNWs heterostructure to solve the problem which SiC optoelectronic devices cannot operate by visible and near-infrared lights. In this structure, SiNWs are prepared on 4H-SiC substrate by Au-catalyzed chemical vapor deposition. Raman spectra indicate that red shift and asymmetric broadening occurs at the low frequency with the increase growth time. XRD shows the polycrystalline structure of the SiNWs, and the growth preferentially along <111> orientation.

Original language	English (US)
Title of host publication	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728102863
DOIs	https://doi.org/10.1109/EDSSC.2019.8754462
State	Published - Jun 2019
Event	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China Duration: Jun 12 2019 → Jun 14 2019

Publication series

Name	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Country/Territory	China
City	Xi'an
Period	6/12/19 → 6/14/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Keywords

4H-SiC
Heterostructure
Raman spectra
Si nanowires

Publisher link

10.1109/EDSSC.2019.8754462

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Zang, Y., Chen, H., Li, L., Lei, Q., & Cho, J. H. (2019). Preparation of SiC/SiNWs heterostructure on 4HSiC(0001). In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 Article 8754462 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8754462

Preparation of SiC/SiNWs heterostructure on 4HSiC(0001). / Zang, Yuan; Chen, Hong; Li, Lianbi et al.
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8754462 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zang, Y, Chen, H, Li, L, Lei, Q & Cho, JH 2019, Preparation of SiC/SiNWs heterostructure on 4HSiC(0001). in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019., 8754462, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, China, 6/12/19. https://doi.org/10.1109/EDSSC.2019.8754462

Zang Y, Chen H, Li L, Lei Q, Cho JH. Preparation of SiC/SiNWs heterostructure on 4HSiC(0001). In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8754462. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). doi: 10.1109/EDSSC.2019.8754462

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title = "Preparation of SiC/SiNWs heterostructure on 4HSiC(0001)",

abstract = "Silicon nanowires can be used as the visible -near infrared absorption layer in SiC/SiNWs heterostructure to solve the problem which SiC optoelectronic devices cannot operate by visible and near-infrared lights. In this structure, SiNWs are prepared on 4H-SiC substrate by Au-catalyzed chemical vapor deposition. Raman spectra indicate that red shift and asymmetric broadening occurs at the low frequency with the increase growth time. XRD shows the polycrystalline structure of the SiNWs, and the growth preferentially along <111> orientation.",

keywords = "4H-SiC, Heterostructure, Raman spectra, Si nanowires",

author = "Yuan Zang and Hong Chen and Lianbi Li and Qianqian Lei and Cho, \{Jeong Hyun\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",

year = "2019",

month = jun,

doi = "10.1109/EDSSC.2019.8754462",

language = "English (US)",

series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",

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PY - 2019/6

Y1 - 2019/6

N2 - Silicon nanowires can be used as the visible -near infrared absorption layer in SiC/SiNWs heterostructure to solve the problem which SiC optoelectronic devices cannot operate by visible and near-infrared lights. In this structure, SiNWs are prepared on 4H-SiC substrate by Au-catalyzed chemical vapor deposition. Raman spectra indicate that red shift and asymmetric broadening occurs at the low frequency with the increase growth time. XRD shows the polycrystalline structure of the SiNWs, and the growth preferentially along <111> orientation.

AB - Silicon nanowires can be used as the visible -near infrared absorption layer in SiC/SiNWs heterostructure to solve the problem which SiC optoelectronic devices cannot operate by visible and near-infrared lights. In this structure, SiNWs are prepared on 4H-SiC substrate by Au-catalyzed chemical vapor deposition. Raman spectra indicate that red shift and asymmetric broadening occurs at the low frequency with the increase growth time. XRD shows the polycrystalline structure of the SiNWs, and the growth preferentially along <111> orientation.

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KW - Heterostructure

KW - Raman spectra

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T3 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

BT - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

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ER -

Preparation of SiC/SiNWs heterostructure on 4HSiC(0001)

Abstract

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