Preparation of SiC/SiNWs heterostructure on 4HSiC(0001)

Yuan Zang, Hong Chen, Lianbi Li, Qianqian Lei, Jeong Hyun Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon nanowires can be used as the visible -near infrared absorption layer in SiC/SiNWs heterostructure to solve the problem which SiC optoelectronic devices cannot operate by visible and near-infrared lights. In this structure, SiNWs are prepared on 4H-SiC substrate by Au-catalyzed chemical vapor deposition. Raman spectra indicate that red shift and asymmetric broadening occurs at the low frequency with the increase growth time. XRD shows the polycrystalline structure of the SiNWs, and the growth preferentially along <111> orientation.

Original languageEnglish (US)
Title of host publication2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728102863
DOIs
StatePublished - Jun 2019
Event2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China
Duration: Jun 12 2019Jun 14 2019

Publication series

Name2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
CountryChina
CityXi'an
Period6/12/196/14/19

Keywords

  • 4H-SiC
  • Heterostructure
  • Raman spectra
  • Si nanowires

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